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Cornell engineers and materials scientists have added a state-of-the-art tool to their suite of laboratory equipment that has helped make the university a world leader in the study of gallium oxide, a...
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
Double quantum dot enhancement-mode silicon lateral geometry
2010/11/17
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device...
Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal
Field-induced water electrolysis switches oxide semiconductor
2010/11/23
Water is composed of two strong electro-chemically active agents, H+ and OH– ions,for oxide semiconductors though water has never been utilized as an active electronic material. Here we demonstrate th...
Application of interference methods for determination of curvature radius in metal–oxide–semiconductor (MOS) structures
Si–SiO2 system interferometry radius of curvature stress
2011/4/27
The paper deals with the measurement of the radius of curvature of silicon wafer surface. The aim of these measurements was to determine stresses generated during oxidation of silicon wafers. A greate...
Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics
Hot-carrier-injection Stress time Drain current Transconductance MOSFET
2010/12/8
In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects gener...